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MG200H1AL1
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MG200H1AL1

SKU: MG200H1AL1
MG200H1AL1 Transistor Silicon NPN CASE: X99 MAKE: Generic
Product specifications
Type Transistor Silicon NPN
Case X99
Manufacturer Generic
Vbr CEO 550
Max. PD (W) 800
Min hFE 80
Ic Max. (A) 200
@Ic (test) (A) 200
Icbo Max. @Vcb Max. (A) 2.0m
Mat. Silicon Logic
Polarity NPN
@VCE (test) 5.0
Oper. Temp (°C) Max. 150
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 800 W
Maximum Collector-Base Voltage |Vcb| 600 V
Maximum Collector-Emitter Voltage |Vce| 550 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 200 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 1000 pF
Forward Current Transfer Ratio (hFE), MIN 80
SKU 252855
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