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MG50G2CL3
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MG50G2CL3

SKU: MG50G2CL3
MG50G2CL3 Transistor Silicon NPN CASE: X99 MAKE: Toshiba
Datasheet
MG50G2CL3 Datasheet
Product specifications
Type Transistor Silicon NPN
Case X99
Manufacturer Toshiba
Vbr CBO 600
Vbr CEO 450
Ckts Per Dev. 1
Max. PD (W) 300
t(f) Max. (S) 2.0u
Min hFE 100
Ic Max. (A) 50
@Ic (test) (A) 50
Polarity NPN
Tr Max. (s) 1.0u
Therm Res. ÚJC (°C/W) 1.3
Therm Res. (J-C) 410m
VCE(sat) Max. 2.0
Oper. Temp (°C) Max. 150
Isolated Case (Y/N) Yes
Pinout Equivalence Number 5-5
Maximum Collector Power Dissipation (Pc) 300 W
Maximum Collector-Base Voltage |Vcb| 600 V
Maximum Collector-Emitter Voltage |Vce| 600 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 50 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 520 pF
Forward Current Transfer Ratio (hFE), MIN 100
SKU 252966
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