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MJD112-1
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MJD112-1

SKU: MJD112-1
MJD112-1 Transistor Silicon NPN CASE: TO251 MAKE: Motorola Semiconductor
Product specifications
Type Transistor Silicon NPN
Case TO251
Manufacturer Motorola Semiconductor
Vbr CEO 100
Max. PD (W) 20
t(f) Max. (S) 4.5u-+
Min hFE 500
Ic Max. (A) 2.0
@Ic (test) (A) 2.0
Icbo Max. @Vcb Max. (A) 20u
Mat. Silicon Logic
Polarity NPN
Tr Max. (s) 2.6u-
R(sat) (Û) 1.2
Derate Above 25°C 160m
@VCE (test) 4.0
Oper. Temp (°C) Max. 150
Pinout Equivalence Number 4-104
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 20 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 100 pF
Transition Frequency (ft): 25 MHz
Forward Current Transfer Ratio (hFE), MIN 6000
SKU 432844
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