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MJD253
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MJD253

SKU: MJD253
MJD253 Transistor Silicon PNP CASE: TO252 MAKE: Generic
Product specifications
Type Transistor Silicon PNP
Case TO252
Manufacturer Generic
Vbr CBO 100
Vbr CEO 100
Max. PD (W) 1.4
Derate (Amb) (W/°C) 11m
Max. hFE 180
Min hFE 40
Ic Max. (A) 4.0
@Ic (test) (A) 200m
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
R(sat) (Û) 800m
Trans. Freq (Hz) Min. 40M
Oper. Temp (°C) Max. 150
@VCE (V) 1.0
Pinout Equivalence Number 4-118
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 12.5 W
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Collector Current |Ic max| 4 A
Transition Frequency (ft): 40 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 254119
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