The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
MJD2955
View detailed images (12)

MJD2955

SKU: MJD2955
MJD2955 Transistor Silicon PNP CASE: TO251 MAKE: Generic
Product specifications
Type Transistor Silicon PNP
Case TO251
Manufacturer Generic
Vbr CBO 70
Vbr CEO 60
Max. PD (W) 20
Derate (Amb) (W/°C) 160m
Max. hFE 100
Min hFE 20
Ic Max. (A) 10
Icbo Max. @Vcb Max. (A) 2.0m
Polarity PNP
R(sat) (Û) 800m
Trans. Freq (Hz) Min. 2.0M
Oper. Temp (°C) Max. 140
@VCE (V) 70i
Pinout Equivalence Number 4-104
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 20 W
Maximum Collector-Base Voltage |Vcb| 70 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 10 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 2 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 254120
Back