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MJD350-1
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MJD350-1

SKU: MJD350-1
MJD350-1 Transistor Silicon PNP CASE: TO252 MAKE: Motorola Semiconductor
Product specifications
Type Transistor Silicon PNP
Case TO252
Manufacturer Motorola Semiconductor
Vbr CEO 300
Max. PD (W) 15
Derate (Amb) (W/°C) 120m
Max. hFE 240
Min hFE 30
Ic Max. (A) 500m
@Ic (test) (A) 50m
Icbo Max. @Vcb Max. (A) 100u
Polarity PNP
Oper. Temp (°C) Max. 140
@VCE (V) 10
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 15 W
Maximum Collector-Base Voltage |Vcb| 300 V
Maximum Collector-Emitter Voltage |Vce| 300 V
Maximum Emitter-Base Voltage |Veb| 3 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 30
SKU 1267395
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