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MJD50
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MJD50

SKU: MJD50
MJD50 Transistor Silicon NPN CASE: SOT428 MAKE: ON Semiconductor
Datasheet
MJD50 Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT428
Manufacturer ON Semiconductor
Vbr CBO 500
Vbr CEO 400
Max. PD (W) 15
t(f) Max. (S) 2.0u-+
Max. hFE 150
Min hFE 30
Ic Max. (A) 1.0
@Ic (test) (A) 300m
Icbo Max. @Vcb Max. (A) 200u
Polarity NPN
Tr Max. (s) 200n-
Derate Above 25°C 120m
Trans. Freq (Hz) Min. 10M
Oper. Temp (°C) Max. 140
@VCE (V) 300
Pinout Equivalence Number 4-104
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 15 W
Maximum Collector-Base Voltage |Vcb| 500 V
Maximum Collector-Emitter Voltage |Vce| 400 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 359109
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