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MJE2010
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MJE2010

SKU: MJE2010
MJE2010 Transistor Silicon PNP CASE: TO126 MAKE: Motorola Semiconductor
Product specifications
Type Transistor Silicon PNP
Case TO126
Manufacturer Motorola Semiconductor
Vbr CBO 40
Vbr CEO 40
Max. PD (W) 80
Derate (Amb) (W/°C) 640m
Max. hFE 125
Min hFE 25
Ic Max. (A) 5.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 400u
Polarity PNP
Trans. Freq (Hz) Min. 3.0M
Oper. Temp (°C) Max. 140
@VCE (V) 4.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 80 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN 25
SKU 254157
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