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MMBT200
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MMBT200

SKU: MMBT200
MMBT200 Transistor Silicon PNP CASE: SOT23 MAKE: National Semiconductor - NSC
Product specifications
Equivalent MMBT200A
Type Transistor Silicon PNP
Case SOT23
Manufacturer National Semiconductor - NSC
Vbr CBO 60
Vbr CEO 45
Max. PD (W) 350m
C(ob) (F) 6.0p
hfe 80
Icbo Max. @Vcb Max. (A) 50n
Polarity PNP
Trans. Freq (Hz) Min. 250M
@VCE (test) (V) 1.0
@Ic (A) 100u
Pinout Equivalence Number 3-17
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.35 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 45 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 6 pF
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN 80
SMD Transistor Code N2
SKU 555529
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