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NTE106
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NTE106

SKU: NTE106
NTE106 Transistor Silicon PNP CASE: TO18 MAKE: NTE Electronics
Datasheet
NTE106 Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO18
Manufacturer NTE Electronics
Vbr CBO 35
Vbr CEO 15
Max. PD (W) 250m
hfe 20
Ic Max. (A) 75m
Polarity PNP
Trans. Freq (Hz) Min. 500M
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.36 W
Maximum Collector-Base Voltage |Vcb| 15 V
Maximum Collector-Emitter Voltage |Vce| 15 V
Maximum Emitter-Base Voltage |Veb| 4.5 V
Maximum Collector Current |Ic max| 0.2 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 2 pF
Transition Frequency (ft): 850 MHz
Forward Current Transfer Ratio (hFE), MIN 50
SKU 360242
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