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PMBT5550
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PMBT5550

SKU: PMBT5550
PMBT5550 Transistor Silicon NPN CASE: SOT23 MAKE: Philips
+ VAT 20% for UK purchases
Product specifications
Type Transistor Silicon NPN
Case SOT23
Manufacturer Philips
Vbr CBO 160
Vbr CEO 140
Max. PD (W) 350m
C(ob) (F) 6.0p
hfe 20
Ic Max. (A) 600m
Icbo Max. @Vcb Max. (A) 100n
Polarity NPN
Trans. Freq (Hz) Min. 100M
@VCE (test) (V) 5.0
Oper. Temp (°C) Max. 150
@Ic (A) 50m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.25 W
Maximum Collector-Base Voltage |Vcb| 160 V
Maximum Collector-Emitter Voltage |Vce| 140 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 0.3 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 6 pF
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 60
SMD Transistor Code 1F_p1F_t1F_W1F
SKU 563076
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