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RFD4N06L
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RFD4N06L

SKU: RFD4N06L
RFD4N06L is an N-channel power MOSFET in a TO-251AA (I-PAK) package. It is a 60 V, 4 A logic-level device with a maximum RDS(on) of 0.600 Ω at 1 A, 5 V, 30 W power dissipation and a −55 °C to +175 °C junction temperature.
Price:
£5.75 Inc. VAT (£4.79 Ex. VAT)
£5.75 Inc. VAT (£4.79 Ex. VAT)
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Product specifications
Type Transistor N Channel MOSFET
Case TO251
Manufacturer Harris Semiconductor
Vbr DSS 60
Vbr GSS 10
Max. PD (W) 30#
td(on) Max (S) 20n
Derate (Amb) (W/°C) 200m
t(f) Max. (S) 160n
Id Max. (A) 4#
Tr Max. (s) 130n
R(ds) On (Û) 600m
t(stor) Max. (S) 40n
Oper. Temp (°C) Max. 175
Pinout Equivalence Number 4-109
Surface Mounted Yes/No NO
SKU 86431
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