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RN1307
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RN1307

SKU: RN1307
RN1307 SI-NPN-DIGI - Case: SOT323 Make: Toshiba
+ VAT 20% for UK purchases
Datasheet
RN1307 Datasheet
Product specifications
Equivalent RN1307-SMD
Case SOT323
Type Transistor N Channel Silicon
Manufacturer Toshiba
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.1 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 3 pF
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN 80
SMD Transistor Code XH
Built in Bias Resistor R1 10 kOhm
Built in Bias Resistor R2 47 kOhm
Typical Resistor Ratio R1/R2 0.21
SKU 361518
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