RN2104F

SKU: RN2104F

RN2104F Transistor Silicon NPN CASE: SOT416 MAKE: Toshiba

Datasheet

RN2104F Datasheet

Product specifications

Weight	0.01 kg
Equivalent	RN2104
Type	Transistor Silicon NPN
Case	SOT416
Manufacturer	Toshiba
Polarity	Pre-Biased-PNP
Maximum Collector Power Dissipation (Pc)	0.1 W
Maximum Collector-Base Voltage \|Vcb\|	50 V
Maximum Collector-Emitter Voltage \|Vce\|	50 V
Maximum Emitter-Base Voltage \|Veb\|	10 V
Maximum Collector Current \|Ic max\|	0.1 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	3 pF
Transition Frequency (ft):	200 MHz
Forward Current Transfer Ratio (hFE), MIN	80
SMD Transistor Code	YD
Built in Bias Resistor R1	47 kOhm
Built in Bias Resistor R2	47 kOhm
Typical Resistor Ratio R1/R2	1
SKU	361666

Back