RN2109F

SKU: RN2109F

RN2109F Transistor Silicon NPN CASE: SOT416 MAKE: Toshiba

Datasheet

RN2109F Datasheet

Product specifications

Weight	0.01 kg
Equivalent	RN2109
Type	Transistor Silicon NPN
Case	SOT416
Manufacturer	Toshiba
Polarity	Pre-Biased-PNP
Maximum Collector Power Dissipation (Pc)	0.1 W
Maximum Collector-Base Voltage \|Vcb\|	50 V
Maximum Collector-Emitter Voltage \|Vce\|	50 V
Maximum Emitter-Base Voltage \|Veb\|	15 V
Maximum Collector Current \|Ic max\|	0.1 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	3 pF
Transition Frequency (ft):	200 MHz
Forward Current Transfer Ratio (hFE), MIN	70
SMD Transistor Code	XJ_YJ
Built in Bias Resistor R1	47 kOhm
Built in Bias Resistor R2	22 kOhm
Typical Resistor Ratio R1/R2	2.1
SKU	361681

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