The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
RT5402
View detailed images (12)

RT5402

SKU: RT5402
RT5402 Transistor Silicon NPN CASE: TO5 MAKE: Raytheon Semiconductor
Product specifications
Type Transistor Silicon NPN
Case TO5
Manufacturer Raytheon Semiconductor
Vbr CBO 30
Vbr CEO 25
Max. PD (W) 700m
C(ob) (F) 19p
Derate (Amb) (W/°C) 4.0m
hfe 300
Ic Max. (A) 750
Icbo Max. @Vcb Max. (A) 1.0u
Polarity NPN
Trans. Freq (Hz) Min. 100M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 200
@Ic (A) 10m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.33 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 140 °C
Collector Capacitance (Cc) 4 pF
Forward Current Transfer Ratio (hFE), MIN 100
SKU 565213
Back