The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
SMBT35200MT1G
View detailed images (1)

SMBT35200MT1G

SKU: SMBT35200MT1G
SMBT35200MT1G Transistor Silicon PNP CASE: SOT457 MAKE: Generic
Product specifications
Type Transistor Silicon PNP
Case SOT457
Manufacturer Generic
Polarity PNP
Maximum Collector Power Dissipation (Pc) 0.63 W
Maximum Collector-Base Voltage |Vcb| 55 V
Maximum Collector-Emitter Voltage |Vce| 35 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 100 pF
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SMD Transistor Code G4
SKU 1441006
Back