The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
TEC9012
View detailed images (12)

TEC9012

SKU: TEC9012
TEC9012 Transistor Silicon PNP CASE: TO92 MAKE: Toshiba
Product specifications
Equivalent TEC9012J
Type Transistor Silicon PNP
Case TO92
Manufacturer Toshiba
Vbr CBO 30
Vbr CEO 25
Max. PD (W) 625m
C(ob) (F) 7.0p
Derate (Amb) (W/°C) 5.0m
hfe 214
Ic Max. (A) 800m
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
Trans. Freq (Hz) Min. 200M
@VCE (test) (V) 1.0
Oper. Temp (°C) Max. 150
@Ic (A) 50m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.625 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 25 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.8 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 96
SKU 585678
Back