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TIP31F
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TIP31F

SKU: TIP31F
TIP31F Transistor Silicon NPN CASE: TO220 MAKE: NTE Electronics
Datasheet
TIP31F Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO220
Manufacturer NTE Electronics
Vbr CBO 200
Vbr CEO 160
Max. PD (W) 2.0
t(f) Max. (S) 300n-
Min hFE 25
Ic Max. (A) 3.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 300u
Polarity NPN
Tr Max. (s) 500n-
Derate Above 25°C 16m
Trans. Freq (Hz) Min. 3.0M
Oper. Temp (°C) Max. 140
@VCE (V) 4.0
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 40 W
Maximum Collector-Base Voltage |Vcb| 200 V
Maximum Collector-Emitter Voltage |Vce| 160 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 364528
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