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TIP35E
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TIP35E

SKU: TIP35E
TIP35E Transistor Silicon NPN CASE: TO218 MAKE: NTE Electronics
Datasheet
TIP35E Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO218
Manufacturer NTE Electronics
Vbr CBO 180
Vbr CEO 140
Max. PD (W) 125
t(f) Max. (S) 700n-
Max. hFE 50
Min hFE 8
Ic Max. (A) 25
@Ic (test) (A) 15
Icbo Max. @Vcb Max. (A) 1.0m
Polarity NPN
Tr Max. (s) 400n-
Derate Above 25°C 1.0
Trans. Freq (Hz) Min. 3.0M
Oper. Temp (°C) Max. 140
@VCE (V) 4.0
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 90 W
Maximum Collector-Base Voltage |Vcb| 180 V
Maximum Collector-Emitter Voltage |Vce| 140 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 25 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 364539
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