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XB112
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XB112

SKU: XB112
XB112 Transistor Germanium PNP CASE: TO1 MAKE: AEI Semiconductors
Product specifications
Type Transistor Germanium PNP
Case TO1
Manufacturer AEI Semiconductors
Vbr CBO 35
Max. PD (W) 150m
Derate (Amb) (W/°C) 3.0m
hfe 30
Icbo Max. @Vcb Max. (A) 10u
Polarity PNP
@VCE (test) (V) 5.0i
Oper. Temp (°C) Max. 60
@Ic (A) 1.0m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.09 W
Maximum Collector-Base Voltage |Vcb| 16 V
Maximum Collector-Emitter Voltage |Vce| 12 V
Maximum Emitter-Base Voltage |Veb| 12 V
Max. Operating Junction Temperature (Tj) 55 °C
Forward Current Transfer Ratio (hFE), MIN 20
SKU 533533
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