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2SD855A
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2SD855A

SKU: 2SD855A
2SD855A Transistor Silicon NPN CASE: SOT78 MAKE: Matsushita Electronics
Product specifications
Equivalent 2SD855
Type Transistor Silicon NPN
Case SOT78
Manufacturer Matsushita Electronics
Vbr CBO 80
Vbr CEO 80
Max. PD (W) 30
Max. hFE 450
Min hFE 40
Ic Max. (A) 1.0
@Ic (test) (A) 0.2
Icbo Max. @Vcb Max. (A) 300u
Polarity NPN
Tr Max. (s) 1.2u
Derate Above 25°C 240m
Oper. Temp (°C) Max. 140
@VCE (V) 4.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 30 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 40
SKU 550836
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